Dual N-Channel Enhancement Mode MOSFET Features
• 20V/6A,
RDS(ON) =22mΩ(typ.) @ VGS =4.5V RDS(ON) =28mΩ(typ.) @ VGS =2.5V
Pin Description
DS1S1G1
12348765DS2S2G2
• Super High Dense Cell Design• Reliable and Rugged
• Lead Free Available (RoHS Compliant)
TSSOP-8
DApplications
• Power Management in Notebook Computer,
Portable Equipment and Battery Powered Systems
G1S1S1D
G2
S2S2Ordering and Marking Information
SM8205A
Lead Free CodeHandling CodeTemp. RangePackage Code
Package Code O : TSSOP-8
Operating Junction Temp. Range C : -55 to 150°CHandling Code
TU : Tube TR : Tape & ReelLead Free Code
L : Lead Free Device Blank : Original DeviceXXXXX - Date Code
SM8205A O : SM8205A
XXXXX
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termina-tion finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classifica-tion at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advisecustomers to obtain the latest version of relevant information to verify before placing orders.
Copyright © ANPEC Electronics Corp.Rev. A.1 - Aug., 2007
1
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SM8205AAbsolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol Parameter Rating Unit VDSS VGSS ID* IDM* IS* TJ TSTG PD* RθJA* Note: Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 300µs Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Maximum Power Dissipation Thermal Resistance-Junction to Ambient 2
20 ±10 VGS=4.5V 6 20 1.7 150 -55 to 150 V A A °C TA=25°C 1.0 W TA=100°C 0.4 62.5 °C/W *Surface Mounted on 1inpad area, t ≤ 10sec.
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol Parameter Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS VGS(th) IGSS aSM8205AO Test Condition Unit Min. Typ. Max. 20 V VGS=0V, IDS=250µA Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current VDS=16V, VGS=0V 1 µA 30 TJ=85°C VDS=VGS, IDS=250µA 0.5 0.7 1.5 V VGS=±10V, VDS=0V ±100 nA VGS=4.5V, IDS=6A 22 25 mΩ 28 40 VGS=2.5V, IDS=5.2A ISD=1.7A, VGS=0V 0.7 1.3 V VDS=10V, VGS=4.5V, IDS=6A 10 13 RDS(ON) Drain-Source On-state Resistance VSD aDiode Forward Voltage bGate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge 3.6 nC 2 Copyright © ANPEC Electronics Corp.Rev. A.1- Aug., 2007
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Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)
Symbol Parameter Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss td(ON) Tr Tf Notes: a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
bSM8205AO Test Condition Unit Min. Typ. Max. VGS=0V,VDS=0V,F=1MHz 9 Ω VGS=0V, VDS=15V, Frequency=1.0MHz VDD=10V, RL=10Ω, IDS=1A, VGEN=4.5V, RG=6Ω 520 110 17 15 45 32 28 82 ns pF 70 Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Fall Time td(OFF) Turn-off Delay Time 25 46 Copyright © ANPEC Electronics Corp.
Rev. A.1 - Aug., 2006 3www.anpec.com.tw
SM8205A Typical Characteristics
Power Dissipation
Drain Current
2.576
2.0
1.5
ID - Drain Current (A)54321
Ptot - Po wer (W) 1.0
0.5
o 0.0
TA=25C0
20
40
60
80100120140160
TA=25C,VG=4.5V00
20
40
60
80
100120140160
oTj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
nt Thermal ResistanceNormalized Transie5021
Duty = 0.50.20.1ID - Drai n Current (A)s(on) L10
imit300µs1ms10msRd0.1
0.050.020.011
100ms1s 0.1
DC0.01
Single PulseMounted on 1in padoRθJA : 62.5 C/W20.010.01
TA=25C0.1
1
o10100
1E-31E-4
1E-30.010.111030
VDS - Drain - Source Voltage (V)Square Wave Pulse Duration (sec)
Copyright © ANPEC Electronics Corp.Rev. A.1 - Aug., 2007
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SM8205ATypical Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
5550201816
VGS= 2, 3, 4, 5, 6, 7, 8, 9, 10V1VRDS(ON) - On - Resistance (mΩ)4540353025201510VGS=10VVGS= 4.5VID - Drain Current (A)141210
0.5V864200
1
2
3
4
5
0481216
VDS - Drain-Source Voltage (V)ID - Drain Current (A)
Transfer Characteristics 20
Gate Threshold Voltage
1.6
IDS =250µANormalized Threshold Voltage1.41.21.00.80.60.4
16
ID - Drain Current (A)12
8
Tj=25C4
Tj=125CooTj=-55Co0
0.0
0.10.20.30.40.50.60.70.8
0.2
-50-25
VGS - Gate - Source Voltage (V)
Tj - Junction Temperature (°C)
0255075100125150
Copyright © ANPEC Electronics Corp.Rev. A.1 - Aug., 2007
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20
SM8205A Typical Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward 2.4
VGS= 4.5V ID = 6A20
Normalized On Resistance2.0
10
1.6
IS - Source Current (A)Tj=150Co 1.2
0.8
0.4
RON@Tj=25C: 28mΩ0
25
50
75
100125150
o0.0
-50-25
1
0.00.20.40.60.81.01.21.41.61.82.0
Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V)Capacitance
Gate Charge 109
VDS= 10V ID = 6A800
Frequency=1MHz700
VGS - Gate - source Voltage (V)8765432100
4
8
12
16
20
600
C - Capacitance (pF)Ciss500400300200
Coss1000
Crss 048121620
VDS - Drain - Source Voltage (V)
QG - Gate Charge (nC)
Copyright © ANPEC Electronics Corp.Rev. A.1 - Aug., 2007
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Tj=25CoSM8205A Packaging Information (Cont.)
TSSOP-8
e872 x E / 2E1ES(2)GAUGEPLANE12e/2DA2A bA10.25L(L1)(3)1DimAA1A2bDeEE1LL1RR1Sφ1φ2φ3MillimetersMin.0.000.800.192.90.65 BSC6.40 BSC4.300.451.0 REF0.090.090.20°0.0040.0040.0080°4.500.750.1690.018Max.1.20.151.050.303.1Min.0.0000.0310.0070.114InchesMax.0.0470.0060.0410.0120.1220.026 BSC0.252 BSC0.1770.0300.039REF12° REF12° REF8°12° REF12° REF8°Copyright © ANPEC Electronics Corp.Rev. A.1 - Aug., 2007
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SM8205A Physical Specifications
Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow)
TP
Ramp-uptpCritical ZoneTL to TPTemperatureTL
TsmaxtLTsminRamp-downtsPreheat25
° t 25 C to PeakTime
Classification Reflow Profiles
Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5°C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly 3°C/second max. 100°C 150°C 60-120 seconds 183°C 60-150 seconds See table 1 10-30 seconds Pb-Free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds See table 2 20-40 seconds 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright © ANPEC Electronics Corp.Rev. A.1 - Aug., 2007
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SM8205A Classification Reflow Profiles(Cont.)
Table 1. SnPb Entectic Process – Package Peak Reflow Temperatures 3 3 Volume mmPackage Thickness Volume mm<350 ≥350 <2.5 mm 240 +0/-5°C 225 +0/-5°C ≥2.5 mm 225 +0/-5°C 225 +0/-5°C Table 2. Pb-free Process – Package Classification Reflow Temperatures 333Volume mm Volume mm Package Thickness Volume mm <350 350-2000 >2000 <1.6 mm 260 +0°C* 260 +0°C* 260 +0°C* 1.6 mm – 2.5 mm 260 +0°C* 250 +0°C* 245 +0°C* ≥2.5 mm 250 +0°C* 245 +0°C* 245 +0°C* *Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature +0°C. For example 260°C+0°C) at the rated MSL level. Reliability Test Program
Test itemSOLDERABILITYHOLTPCTTSTMethodMIL-STD-883D-2003MIL-STD 883D-1005.7JESD-22-B, A102MIL-STD 883D-1011.9Description245°C,5 SEC1000 Hrs Bias @ 125°C168 Hrs, 100% RH, 121°C-65°C ~ 150°C, 200 CyclesCarrier Tape & Reel Dimensions
tEPoPP1DWFBoAoD1KoCopyright © ANPEC Electronics Corp.Rev. A.1 - Aug., 2007
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SM8205A Carrier Tape & Reel Dimensions(Cont.)
T2JCABT1Application A B C J T1 T2 W P E ± 0.3 330±1 62 ± 1.5 12.75 + 2 + 0.5 12.4 +0.2 2± 0.2 12 8± 0.1 1.75± 0.1 0.1 5 F D D1 Po P1 Ao Bo Ko t 5.5 ± 0.1 1.5 ±0.1 1.5+ 0.1 4.0 ± 0.1 2.0 ± 0.1 7.0 ± 0.1 3.6± 0.3 1.6± 0.1 0.3±0.013 TSSOP-8 Cover Tape Dimensions
ApplicationTSSOP- 8Carrier Width12Cover Tape Width9.3 (mm)
Devices Per Reel2500 Customer Service
Anpec Electronics Corp.Head Office :
No.6, Dusing 1st Road, SBIP,Hsin-Chu, Taiwan, R.O.C.Tel : 886-3-5642000Fax : 886-3-5642050Shenzhen Branch :
A-507,Hi-Tech Venture Park,Tian'an Cyber Park,Shenzhen,P.R.ChinaTel : +86-755-8204 9356Fax : +86-755-8204 9359
Copyright ANPEC Electronics Corp.Rev. A.1 - Aug., 2007
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