METHOD FOR PRODUCING POLYCRYSTALLINE SILICON

专利名称：METHOD FOR PRODUCING

POLYCRYSTALLINE SILICON

发明人：CHUKANOV, ANDREY

PAVLOVICH,SHEVCHENKO, RUSLANALEKSEEVICH,VAKHRUSHIN, ALEXANDERYUREVICH,MANCHULYANTSEV, OLEGALEXANDROVICH,SMETANKINA, STELLAVALERIEVNA

申请号：RU2008000523申请日：20080815

公开号：WO20090012A3公开日：20090528

摘要：The invention relates to metallurgy and/or chemistry, in particular to methodsand devices for producing a silicon tetrafluoride gas and polycrystalline silicon from saidsilicon tetrafluoride gas. The method for producing silicon tetrafluoride from a

hydrosilicofluoric acid solution consists in forming, washing, drying and decomposing theacid extract and in bubbling a nonseparated silicon tetrafluoride and hydrogen fluorideflow through silicon dioxide. The silicon producing method consists in interacting thesilicon tetrafluoride gas with magnesium vapour and in subsequently separating a finalproduct. Said invention makes it possible to produce a highly pure silicon, to increase thefinal produce yield, to improve the environmental friendliness of the production, tosimplify the silicon production process and to reduce the production cost of the finalproduct.

申请人：ZAKRYTOE AKTSIONERNOE OBSCHESTVO \"SOLAR SI\PAVLOVICH,SHEVCHENKO, RUSLAN ALEKSEEVICH,VAKHRUSHIN, ALEXANDERYUREVICH,MANCHULYANTSEV, OLEG ALEXANDROVICH,SMETANKINA, STELLAVALERIEVNA

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