Contact plugs in SRAM cells and the method of form

专利名称：Contact plugs in SRAM cells and the method

of forming the same

发明人：Jhon-Jhy Liaw申请号：US13691367申请日：20121130公开号：US09236300B2公开日：20160112

专利附图：

摘要：A method includes forming a dielectric layer over a portion of an SRAM cell. TheSRAM cell includes a first pull-up transistor and a second pull-up transistor, a first pull-down transistor and a second pull-down transistor forming cross-latched inverters with

the first pull-up transistor and the second pull-up transistor, and a first pass-gatetransistor and a second pass-gate transistor connected to drains of the first pull-uptransistor and the first pull-down transistor and drains of the second pull-up transistorand the second pull-down transistor, respectively. A first mask layer is formed over thedielectric layer and patterned. A second mask layer is formed over the dielectric layerand patterned. The dielectric layer is etched using the first mask layer and the secondmask layer in combination as an etching mask, wherein a contact opening is formed in thedielectric layer. A contact plug is formed in the contact opening.

申请人：Taiwan Semiconductor Manufacturing Company, Ltd.

地址：Hsin-Chu TW

国籍：TW

代理机构：Haynes and Boone, LLP

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