专利名称：Method for manufacturing liquid crystal
display device
发明人：Hideo Tanaka申请号：US10559169申请日：20040603
公开号：US20060164573A1公开日：20060727
专利附图：
摘要：A semiconductor film is formed in a gap between a source electrode and a drainelectrode of a thin film transistor in an active-matrix type liquid crystal display device. Ametal film for a gate electrode is formed on said semiconductor film via a gate insulating
film. A photo-resist film, having a thick portion in region including the gap and having anopening portion in contact-hole forming region, is formed on the metal film. A contact-hole is formed in the gate insulating film by using the organic material film as a mask. Theorganic material film is left on the region including the gap. A gate electrode is formedon the region including the gap by etching the first metal film by using the remainedorganic material film as a mask. An organic material film, having projections anddepressions, is formed on a reflective region except the contact-hole forming region. Areflective electrode is formed on the organic material film having projections anddepressions
申请人：Hideo Tanaka
地址：Nishi-ku, Kobe-shi, Hyogo JP
国籍：JP
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