GaAs MMIC
CGY 60
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D a t a s h e e t*Low noise preamplifier for mobile communication(PCN, DECT, GSM) in 2.7V to 6V systems*Biased monolithic microwave IC (MMIC)Matched to 50Ω for 1.7 to 2GHz*Easily matchable to 50Ω for lower frequencies(i.e. GSM-application)*No bias coil needed*Low noise figure and high gain (typ. NF=1.9dB, G=12.5dB @ 3V, 1.85GHz)*Low power consumption*Frequency range 200 MHz ... 2.5 GHzESD:Electrostatic discharge sensitive device,observe handling precautions!Vd6RF-GND5RF-out4321RF-GNDDC-GNDRF-inTypeMarking
Ordering code
(taped)
Package 1)
CGY 60Y7sQ62702G-39MW-6Maximum ratingsDrain voltageChannel temperatureStorage temperature rangeTotal power dissipation (TS < 132°C) 2)Thermal resistanceChannel-soldering point (GND)Channel-ambient 3)SymbolUnit8150-55...+15080V°C°CmWVDTChTstgPtotRthChSRthChA< 220< 300K/WK/W1)Dimensions see chapter Package Outlines
2)Please care for sufficient heat dissipation on the pcb!
3)Package mounted on alumina 15 mm x 16.7 mm x 0.7 mm
Siemens Aktiengesellschaftpg. 1/7
12.01.96 HL EH PD 21
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GaAs MMIC
Electrical characteristics of CGY60 in GSM application circuit
CGY 60
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TA = 25°C
f=950MHzRS = RL = 50 Ω
unless otherwise specifiedCharacteristicsDrain currentPower GainUd = 3VUd = 5VSymbolmin---typ615.5171.351.3010101111max9UnitmAdBIDG--dB--dB--dB--dBmNoise figureUd = 3VUd = 5VF--Input return lossUd = 3VUd = 5VRLin----Output return lossUd = 3VUd = 5VRLoutThird order input intercept pointtwo-tone intermodulation testf1 = 950MHz, f2 = 951MHzPin = -20dBm (both carriers)Ud = 3VUd = 5VIP3---3-1--dBmInput power at1dB gain compressionUd = 3VUd = 5VP-1dB---10-8--Siemens Aktiengesellschaftpg. 2/7
12.01.96 HL EH PD 21
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GaAs MMIC
Electrical characteristics in PCN-, DECT-application circuit
CGY 60
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TA = 25°C
f=1850MHzRS = RL = 50 Ω
unless otherwise specifiedCharacteristicsDrain currentPower GainUd = 3VUd = 5VSymbolmin---typ612.513.51.901.8514.514.51414max9UnitmAdBIDG--dB--dB--dB--dBmNoise figureUd = 3VUd = 5VF--Input return lossUd = 3VUd = 5VRLin----Output return lossUd = 3VUd = 5VRLoutThird order input intercept pointtwo-tone intermodulation testf1 = 1850MHz, f2 = 1851MHzPin = -20dBm (both carriers)Ud = 3VUd = 5VIP3--02--dBmInput power at1dB gain compressionUd = 3VUd = 5VP-1dB---7-5--Siemens Aktiengesellschaftpg. 3/7
12.01.96 HL EH PD 21
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GaAs MMIC
CGY 60
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Application Circuit for measuring S- and Noise-parameters
f = 200MHz to 2GHz
Ud
1nF65Input50 Ohm3421100p*100p*Output50 Ohm50 Ohm Microstripline
* Use 12 to15pF for DECT - or PCN - applications
900MHz Application (GSM)
1nFUd27pFl = 4.1 mm *LInput50 Ohml = 5 mm *l = 4.1 mm *l = 6.8 mm *Output50 OhmOpen Stub27pF50 Ohm Microstripline120 Ohm
L = discrete inductor 15nH, Type SIMID01, Ord.- No: B82412-A3150-M
εSiemens Aktiengesellschaftpg. 4/7
12.01.96 HL EH PD 21
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GaAs MMIC
PCB - Layouts for Application Circuits
PCN -, DECT - application board:
CGY 60
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1nF15pFUd15pFinoutCGY60 1800MHz1nF27pFUd27pFinoutCGY60 900MHzactual size( 20 x 20 mm )
PCB - data: Glass fiber teflon board (double sided) TACONIC TLX-9-0150-CH/CH
εr = 2.45 thickness = 0.4mm
Siemens Aktiengesellschaftpg. 5/7
12.01.96 HL EH PD 21
元器件交易网www.cecb2b.com
GaAs MMIC
Typical S- and Noise-Parameters
CGY 60
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f/GHzS11MAGANG0.10.97-50.20.97-90.30.96-140.40.94-190.50.93-230.60.91-290.70.88-340.80.85-400.90.81-461.00.76-521.10.71-591.20.64-661.30.58-741.40.51-831.50.43-931.60.34-1061.70.26-1221.80.19-1491.90.151722.00.181312.10.241062.20.32902.30.39782.40.46692.5
0.52
61
fFminGHzdB0.91.271.31.351.81.502.0
1.60
Siemens AktiengesellschaftVD = 3 V Zo = 50Ω
S21S12MAGANGMAGANG2.98-1350.005803.85-1620.009774.13-1770.013744.271720.017734.351630.021714.401550.026674.451480.029654.481400.033634.511320.037604.551250.042544.601170.045504.621100.048464.631020.051414.61940.053364.58850.054314.51770.055264.40690.055204.30600.054154.13510.051113.94430.04953.73350.0462.53.56270.043-53.33200.038-93.09130.033-112.87
5
0.028
-12
Γopt
MAGANG-deg0.70270.63390.42590.30
62
pg. 6/7
S22MAGANG0.74-340.51-440.41-470.35-480.33-490.31-510.30-540.29-580.29-630.28-690.27-740.26-800.26-860.25-930.24-1010.23-1090.22-1180.21-1280.20-1400.19-1510.18-1630.181770.181700.181600.19
151
RNΩ47.832.718.215.0
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GaAs MMIC
Typical S- and Noise-Parameters
VD = 5 V
Zo = 50ΩCGY 60
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f/GHzS11MAGANG0.10.97-40.20.97-90.30.96-140.40.94-180.50.93-230.60.90-280.70.88-340.80.85-390.90.81-451.00.76-511.10.71-581.20.65-651.30.59-721.40.52-811.50.44-901.60.36-1031.70.28-1181.80.20-1401.90.16-1762.00.171412.10.231132.20.31952.30.38822.40.45722.5
0.52
64
fFminGHzdB0.91.231.31.321.81.452.0
1.53
Siemens AktiengesellschaftS21S12MAGANGMAGANG3.58-1370.005744.49-1640.009754.78-1780.013744.911710.017714.961630.021705.021540.024675.091470.028645.111390.032625.141320.036605.161250.041555.231180.044505.251100.046455.251020.049425.25950.050375.21870.052325.15780.052275.05700.052234.93620.051174.77530.050134.57450.04784.36370.04554.18290.042-23.92210.037-63.66140.032-83.39
7
0.027
-9
Γopt
MAGANG-deg0.69260.67390.45550.32
60
pg. 7/7
S22MAGANG0.72-310.52-370.44-380.39-390.37-400.36-420.35-450.34-500.34-540.33-590.32-640.31-700.30-750.29-810.27-880.26-950.24-1020.22-1110.20-1210.18-1310.17-1420.16-1580.14-1730.141740.14
162
RNΩ47.733.318.615.2
12.01.96 HL EH PD 21
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