元器件交易网www.cecb2b.comSi9953DYVishay SiliconixDual P-Channel 20-V (D-S) MOSFETPRODUCTSUMMARYVDS (V)–20rDS(on) (W)0.25 @ VGS = –10 V0.40 @ VGS = –4.5 VID (A)\"2.3\"1.5S1S2SO-8S1G1S2G21234Top View8765D1D1D2D2G1G2D1D1D2D2P-Channel MOSFETP-Channel MOSFETABSOLUTEMAXIMUMRATINGS(TA=25_CUNLESSOTHERWISENOTED)ParameterDrain-Source VoltageGate-Source VoltageContinuous Drain Current (TJ = 150_C)aPulsed Drain CurrentContinuous Source Current (Diode Conduction)aMaximum Power DissipationaOperating Junction and Storage Temperature RangeTA = 25_CTA = 70_CTA = 25_CTA = 70_CSymbolVDSVGSIDIDMISPDTJ, TstgLimit–20\"20\"2.3\"1.8\"10–1.72.01.3–55 to 150UnitVAW_CTHERMALRESISTANCERATINGSParameterMaximum Junction-to-AmbientaNotesa.Surface Mounted on FR4 Board, t v 10 sec.For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htmDocument Number: 70138S-00652—Rev. K, 27-Mar-00www.vishay.com S FaxBack 408-970-5600SymbolRthJALimit62.5Unit_C/W1元器件交易网www.cecb2b.comSi9953DYVishay SiliconixSPECIFICATIONS(TJ=25_CUNLESSOTHERWISENOTED) ParameterStatic Gate Threshold VoltageGate-Body LeakageZero Gate Voltage Drain CurrentOn-State Drain CurrentbVGS(th)IGSSIDSSVDS = VGS, ID = –250 mAVDS = 0 V, VGS = \"20 VVDS = –16 V, VGS = 0 VVDS = –16 V, VGS = 0 V, TJ = 55_CVDS v –5 V, VGS = –10 VVDS v –5 V, VGS = –4.5 VVGS = –10 V, ID = 1 AVGS = –4.5 V, ID = 0.5 AVDS = –15 V, ID = –2.3 AIS = –1.7 A, VGS = 0 V–10–1.50.120.222.5–0.8–1.20.250.40–1.0\"100–2–25VnAmASymbolTest ConditionMinTypaMaxUnitID(on)ADrain-Source On-State ResistancebForward TransconductancebDiode Forward VoltagebrDS(on)gfsVSDWSVDynamicaTotal Gate ChargeGate-Source ChargeGate-Drain ChargeTurn-On Delay TimeRise TimeTurn-Off Delay TimeFall TimeSource-Drain Reverse Recovery TimeQgQgsQgdtd(on)trtd(off)tftrrIF = 1.7 A, di/dt = 100 A/msVDD = –10 V, R10V,RL = 10 10WID^ –1 A, V1AVGEN = –10 V, R10VRG = 6 6WVDS = –10 V, 10V VGS = –10 V, I10VID = –2.3 A23A6.71.31.6101220107040409050100ns25nCCNotesa.Guaranteed by design, not subject to production testing.b.Pulse test; pulse width v300 ms, duty cycle v2%.www.vishay.com S FaxBack 408-970-56002Document Number: 70138S-00652—Rev. K, 27-Mar-00元器件交易网www.cecb2b.comSi9953DYVishay SiliconixTYPICALCHARACTERISTICS(25_CUNLESSNOTED)Output Characteristics15VGS = 10 – 7 V12ID– Drain Current (A)6 VID– Drain Current (A)825_C95 V66125_C10TC = –55_CTransfer Characteristics434 V3 V200246810001234567VDS – Drain-to-Source Voltage (V)VGS – Gate-to-Source Voltage (V)On-Resistance vs. Drain Current1.0VGS = 4.5 VrDS(on)– On-Resistance (Ω)0.8C – Capacitance (pF)500400Coss300700600Capacitance0.60.4Ciss200100Crss0.2VGS = 10 V0024ID – Drain Current (A)68005101520VDS – Drain-to-Source Voltage (V)10Gate Charge2.0On-Resistance vs. Junction TemperatureVGS– Gate-to-Source Voltage (V)6rDS(on)– On-Resistance (Ω)(Normalized)8VDS =10 VID = 2.3 A1.6VGS = 10 VID = 1.0 A1.240.820.40024680–50–250255075100125150Qg – Total Gate Charge (nC)TJ – Junction Temperature (_C)Document Number: 70138S-00652—Rev. K, 27-Mar-00www.vishay.com S FaxBack 408-970-56003元器件交易网www.cecb2b.comSi9953DYVishay SiliconixTYPICALCHARACTERISTICS(25_CUNLESSNOTED)20Source-Drain Diode Forward Voltage1.0On-Resistance vs. Gate-to-Source VoltagerDS(on)– On-Resistance (Ω)10IS– Source Current (A)TJ = 150_C0.8ID = 2.3 A0.6TJ = 25_C0.40.210.20.40.60.81.01.21.41.6VSD – Source-to-Drain Voltage (V)00246810VGS – Gate-to-Source Voltage (V)0.8Threshold Voltage30Single Pulse Power0.6ID = 250 µAVGS(th)Variance (V)0.425200.2150.010–0.250–2502550751001251500.0100.10011030–0.4–50TJ – Temperature (_C)21Duty Cycle = 0.5Normalized Effective TransientThermal ImpedanceNormalized Thermal Transient Impedance, Junction-to-Ambient0.2Notes:0.10.10.050.02Single Pulse0.0110–410–310–210–11PDMt1t21. Duty Cycle, D =t1t22. Per Unit Base = RthJA = 62.5_C/W3. TJM – TA = PDMZthJA(t)4. Surface Mounted1030Square Wave Pulse Duration (sec)www.vishay.com S FaxBack 408-970-56004Document Number: 70138S-00652—Rev. K, 27-Mar-00
