Horizontal tram

专利名称：Horizontal tram

发明人：Jia Zhen Zheng,Weining Li,Tze Ho Simon

Chan,Pradeep RamachandramurthyYelehanka

申请号：US11422560申请日：20060606公开号：US07183590B2公开日：20070227

专利附图：

摘要：An integrated circuit structure includes providing a semiconductor substrateand forming a trench therein. A thyristor is formed around the trench and within the

semiconductor substrate. The thyristor has at least four layers with three P-N junctionstherebetween. A gate for the thyristor is formed within the trench. An access transistor isformed on the semiconductor substrate. An interconnect is formed between thethyristor and the access transistor.

申请人：Jia Zhen Zheng,Weining Li,Tze Ho Simon Chan,Pradeep RamachandramurthyYelehanka

地址：Singapore SG,Singapore SG,Singapore SG,Singapore SG

国籍：SG,SG,SG,SG

代理人：Mikio Ishimaru

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