Method for producing an extended memory array and

专利名称：Method for producing an extended memory

array and apparatus

发明人：Sebastien Zink,Paola Cavaleri,Bruno

Leconte,Jean Devin,Francois Maugain

申请号：US11008586申请日：20041209

公开号：US20060056261A1公开日：20060316

专利附图：

摘要：The present invention relates to a memory on a silicon microchip, comprising aserial input/output and an integrated memory array addressable under N bits. According

to the present invention, the memory comprises means for storing a most significantaddress allocated to the memory within an extended memory array addressable with anextended address of N+K bits, an extended address counter for storing an extendedaddress received at the serial input/output of the memory, the extended addresscomprising N least significant bits that are applied to the integrated memory array, and Kmost significant bits, means for comparing the K most significant bits with the mostsignificant address allocated to the memory, and means for preventing the execution of acommand for reading or writing the integrated memory array if the K most significantaddress bits are different to the most significant address allocated to the memory. Inone embodiment, a ready/busy pad is provided that is taken to a selected potential toprevent access to the memory.

申请人：Sebastien Zink,Paola Cavaleri,Bruno Leconte,Jean Devin,Francois Maugain

地址：Aix En Provence FR,Rousset FR,Rousset FR,Le Tholonet FR,Trets FR

国籍：FR,FR,FR,FR,FR

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