Three-dimensional ferroelectric capacitor and meth

专利名称：Three-dimensional ferroelectric capacitor

and method for manufacturing thereof aswell as semiconductor memory device

发明人：Chiharu Isobe,Yoshio Sakai申请号：US108347申请日：20040429公开号：US07303927B2公开日：20071204

专利附图：

摘要：A ferroelectric capacitor is provided in which the surface area of a ferroelectricthin film is expanded to increase the amount of polarization. In the ferroelectric

capacitor, hemi-spherical protruding parts 31 are formed with HSG-growth on the surfaceof a polycrystalline silicon film 30. On the polycrystalline silicon film 30 having the hemi-spherical protruding parts 31 are sequentially laminated an adhesive layer 32, lowerelectrode 33, ferroelectric film 34, and upper electrode 35. The ferroelectric film 34 isshaped to overlap the shape of hemi-spherical protruding parts 31 of the polycrystallinesilicon film 30, and the surface area thereof is expanded.

申请人：Chiharu Isobe,Yoshio Sakai

地址：Tokyo JP,Kanagawa JP

国籍：JP,JP

代理机构：Sonnenschein Nath & Rosenthal LLP

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