Memory device, memory system, and operation method

专利名称：Memory device, memory system, and

operation method thereof

发明人：Eui-chul Jeong,Sung-hee Lee,Dae-sin

Kim,Seung-hwan Kim,Dae-sun Kim,SuaKim,Dong-soo Woo,Na-ra Kim

申请号：US14290236申请日：20140529公开号：US09293180B2公开日：20160322

专利附图：

摘要：A memory device comprises: a memory cell array comprising first and second

word lines located adjacent to each other, a first memory cell connected to the first wordline, and a second memory cell connected to the second word line and located adjacentto the first memory cell; and a word line voltage supplying unit that transitions a wordline voltage of the first word line from a first word line voltage to a second word linevoltage, in response to a first control signal. A transition control unit generates the firstcontrol signal for controlling a pulse of the word line voltage of the first word line in atransition period from the first word line voltage to the second word line voltage in sucha way that a transition waveform profile from the first word line voltage to the secondword line voltage is different from a transition waveform profile from the second wordline voltage to the first word line voltage.

申请人：Samsung Electronics Co., Ltd.

地址：Suwon-si KR

国籍：KR

代理机构：Onello & Mello LLP

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