用于替换HY1607,HY1707的MOS ZY70N65

ZY70N65

N-CHANNEL 65V - 70A TO-220 POWER MOSFET

TYPE Bvdss Rdson Id ZY70N65 65V 10mΩ 70A Typical Rdson = 8.5mΩ Exceptional dv/dt Capability 100% Avalanche Tested Application Oriented Characterization

DESCRIPTION

This Power Mosfet series realized with SZY Corp. DMOS technology trench process has specifically signed to minimize input capacitance and

gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC

Converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.

APPLICATIONS

HIGH-EFFICIENCY DC-DC CONVERTERS DC MOTOR CONTROL UPS

AUTOMOTIVE ENVIRONMENT

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit Drain-Source Voltage ( Vgs=0 ) Vds 65 V Vdgr Vgs Id (a) Id

IDM (b) Ptot

Drain-gate Voltage (RGS = 20 KΩ) Gate- source Voltage

Drain Current (continuous) at TC = 25　℃ Drain Current (continuous) at TC = 100　℃ Drain Current (pulsed) Total Dissipation at TC = 25　℃

65 V ±20V V 70 A 42 A 240 A 110 W 0.7 W/℃

Derating Factor dv / dt (1) Eas (2)

Peak Diode Recovery voltage slope Single Pulse Avalanche Energy

4 V/ns 360 mj -55~175

℃

Tstg Storage Temperature Tj

Max. Operating Junction Temperature

(a) Current limited by package (1) ISD ≤60A, di/dt ≤400A/us, VDD ≤24V, Tj ≤TJMAX.

(b) Pulse width limited by safe operating area (2) Starting Tj = 25 ℃, ID = 30A, VDD = 30V

THERMAL DATA Rthj-case Rthj-amb Ti

ELECTRICAL CHARACTERISTICS (Tcase = 25 ℃ unless otherwise specified)

Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max Typ

1.36 63 300

℃ / W ℃ / W ℃

OFF

Symbol

Parameter

Test Conditions

ID = 250 uA VGS = 0

Min 65

Typ

Max

UnitV

Bvdss Drain-source Breakdown Voltage

Idss

Zero Gate Voltage Drain Current (VGS = 0)

Igss

Current (VDS = 0)

VDS = Max Rating

VDS = Max Rating TC = 125　℃

1 uA

10

uA

VGS = 　20V ±100nA ON

Symbol VGS(th) RDS(on)

Parameter

Gate Threshold Voltage

Static Drain-source On Resistance

Test Conditions

VDS = VGS ID = 250uA VGS = 10V ID=30A

Min 2

Typ 3 8.5

Max4 10

UnitV mΩ

DYNAMIC

Symbol Gfs

Parameter

Forward Tran conductance

Test Conditions

VDS = 15V ID=30A

Min

Typ 20

Max

UnitS

Ciss Input Capacitance Coss Crss

ELECTRICAL CHARACTERISTICS

Output Capacitance Reverse Transfer Capacitance

VDS = 25V, f = 1 MHz, VGS=0

1810 PF 360 PF 125 PF SWITCHING ON

Symbol td ( on )

Parameter

Turn-on Delay Time

Test Conditions

VDD=30V , ID=30A , Rg=4.7Ω VGS=10V (Resistive Load, Figure 3)

Min

Typ 16

Max

Unit

ns

tr Rise Time Qg

Total Gate Charge

108 ns

49

66

nc

Qgs Gate-Source Charge Qgd

Gate-Drain Charge

VDD = 48V ID = 60 A VGS= 10V 18 nc 14 nc

SWITCHING OFF

Symbol td (off)

Parameter

Turn-off Delay Time

Test Conditions

VDD=30V , ID=30A , Rg=4.7Ω VGS=10V (Resistive Load, Figure 3)

Min

Typ 43 20

Max

Unitns ns

tf Fall Time

SOURCE DRAIN DIODE

Symbol

Parameter

Test Conditions

Min

Typ 73 182

Max

Unit

ISD Source-drain Current ISDM (1) VSD (a) trr Qrr IRRM

Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current

ISD = 60 A VGS = 0 ISD = 60 A VDD = 25 V di/dt = 100A/us Tj= 150　℃ (see test circuit, Figure 5)

60 A 240 A 1.3

V ns nc

5 A (1 ) Pulse width limited by safe operating area (a) Pulsed: Pulse duration = 300 　s, duty cycle 1.5 %

Safe Operating Area Thermal Impedance

Output Characteristic Transfer Characteristics

Source-drain diode forward characteristics Static Drain-source On Resistanc

Gate Charge vs Gate-source Voltag Capacitance Variation

Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature

Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit

Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times

TO-220 POD DATA