MATERIAL FOR FORMING SILICA-BASE COATED INSULATION

专利名称：MATERIAL FOR FORMING SILICA-BASE

COATED INSULATION FILM, PROCESS FORPRODUCING THE MATERIAL, SILICA-BASEINSULATION FILM, SEMICONDUCTORDEVICE, AND PROCESS FOR PRODUCINGTHE DEVICE

发明人：MATSUZAWA, Jun 103, Hitachi Kasei-Matsushiro-House

申请号：EP95923552.4申请日：19950630公开号：EP0768352A1公开日：19970416

摘要：A material for forming silica-base coated insulation films used to form interlayerinsulation films of multi-layer interconnection in VLSIs is provided. A material for forminga silica-base coated insulation film, obtained from (a) an alkoxysilane and/or a partiallyhydrolyzed product thereof, (b) a fluorine-containing alkoxysilane and/or (e) an

alkylalkoxysilane, (c) an alkoxide of a metal other than Si and/or a derivative thereof and(d) an organic solvent. The material for forming silica-base coated insulation filmsaccording to the present invention has a storage stability and also enables thick-layerformation. Silica-base insulation films obtained are transparent and uniform films and arethose in which no defects such as cracks or pinholes are seen, also having a superioroxygen plasma resistance.

申请人：HITACHI CHEMICAL CO., LTD.

地址：1-1, Nishishinjuku 2-chome, Shinjuku-ku Tokyo 163-04 JP

国籍：JP

代理机构：Jönsson, Hans-Peter, Dr.Dipl.-Chem.

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