Vishay Semiconductors
Reflective Optical Sensor with Transistor Output
DescriptionThe TCRT5000 and TCRT500L are reflective sensorswhich include an infrared emitter and phototransistorin a leaded package which blocks visible light. Thepackage includes two mounting clips. TCRT5000L isthe long lead version.TCRT5000TCRT5000LCAFeatures •Package type: Leaded •Detector type: Phototransistor •Dimensions:e2L 10.2 mm x W 5.8 mm x H 7.0 mm •Peak operating distance: 2.5 mm •Operating range: 0.2 mm to 15 mm •Typical output current under test: IC = 1 mA •Daylight blocking filter •Emitter wavelength 950 nm •Lead (Pb)-free soldering released •Lead (Pb)-free component in accordance to RoHS2002/95/EC and WEEE 2002/96/ECEC19156TopviewApplications •Position sensor for shaft encoder •Detection of reflective material such as paper, IBMcards, magnetic tapes etc. •Limit switch for mechanical motions in VCR •General purpose - wherever the space is limitedOrder InstructionsPart NumberTCRT5000TCRT5000LRemarks3.5 mm lead length15 mm lead lengthMinimum Order Quantity4500 pcs, 50 pcs/tube2400 pcs, 48 pcs/tubeAbsolute Maximum RatingsTamb = 25°C, unless otherwise specifiedInput (Emitter)ParameterReverse voltageForward currentForward surge currentPower dissipationJunction temperaturetp ≤ 10 µsTamb ≤ 25 °CTest conditionSymbolVRIFIFSMPVTjValue5603100100UnitVmAAmW°C Document Number 83760Rev. 1.6, 04-Sep-06
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TCRT5000(L)
Vishay Semiconductors
Output (Detector)
Parameter Collector emitter voltage
Emitter collector voltage
Collector current
Power dissipationJunction temperature
Test conditionSymbolVCEOVECOIC
Value705100100100
UnitVVmAmW°C
Tamb ≤ 55 °CPVTj
Sensor
ParameterTotal power dissipationOperation temperature rangeStorage temperature rangeSoldering temperature2 mm from case, t ≤ 10 sTest conditionTamb ≤ 25 °CSymbolPtotTambTstgTsdValue200- 25 to + 85- 25 to + 100260UnitmW°C°C°C300 P - Power Dissipation (mW) Coupled device 200 Phototransistor 100 IR - diode0 095 11071255075100Tamb- Ambient Temperature (°C)Figure1. Power Dissipation Limit vs. Ambient TemperatureElectrical CharacteristicsTamb = 25°C, unless otherwise specifiedInput (Emitter)ParameterForward voltageJunction capacitanceRadiant intensityPeak wavelengthVirtual source diameterTest conditionIF = 60 mAVR = 0 V, f = 1 MHzIF = 60 mA, tP = 20 msIF = 100 mAMethod: 63 % encircled energySymbolVFCjIEλPØ9402.1MinTyp.1.251721Max1.5UnitVpFmW/srnmmmOutput (Detector)
Parameter
Collector emitter voltageEmitter collector voltageCollector dark current
Test condition
IC = 1 mAIE = 100 µA
VCE = 20 V, IF = 0, E = 0
SymbolVCEOVECOICEO
Min707
10Typ.
Max
UnitVV
200
nA
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Document Number 83760
Rev. 1.6, 04-Sep-06
TCRT5000(L)
Vishay Semiconductors
Sensor
Parameter Collector current
Collector emitter saturation voltage
1)
Test condition
VCE = 5 V, IF = 10 mA,
D = 12 mm
IF = 10 mA, IC = 0.1 mA, D = 12 mm
SymbolIC 1,2)VCEsat 1,2)
Min0.5
Typ.1
Max2.10.4
UnitmAV
See figure 3
2) Test surface: Mirror (Mfr. Spindler a. Hoyer, Part No 340005)
94 9226IFICVCCAFlat Mirror∅ = 22.5 mm Rem. 2 d = working distanceD = Distance12 ± 0.2 mm7.0 ± 0.2 mm96 12314 Figure2. Test CircuitFigure3. Test CircuitTypical CharacteristicsTamb = 25°C, unless otherwise specifiedCTRrel- Relative Current Transfer Ratio1000 I Forward Current (mA) F - 1.2 1.1 1.0 0.9 0.8 0.7 VCE =5VI F = 20 mA100 10 1 0.1 00.20.40.6 0.8 1.01.21.41.61.82.096 118620.6 - 30- 20-10010203040506070 80 90 10096 11762 V F - Forward Voltage (V) T amb - Ambient Temperature (°C)Figure4. Forward Current vs. Forward Voltage
Figure5. Relative Current Transfer Ratio vs.
Ambient Temperature
Document Number 83760Rev. 1.6, 04-Sep-06
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TCRT5000(L)
Vishay Semiconductors
10 1 0.1 1.2 VCE = 5 V I Relative Collector Current Crel - I C- Collector Current (mA)1.0 0.8 0.6 0.4 0.2 0.0 0VCE = 10 V I F = 20 mA 0.01 0.001 0.1 96 11763 110100I F - Forward Current (mA)96 11766 481012141626d - Distance to Reflecting Card (mm) Figure6. Collector Current vs. Forward CurrentFigure9. Relative Collector Current vs. Distance10 IC - Collector Current (mA) I F = 50 mA20 mA 1 10 mA 5 mA 0.1 2 mA 1 mA 0.01 0.1 96 11764 1 10 100VCE - Collector Emitter Voltage (V) Figure7. Collector Emitter Saturation Voltage vs. Collector CurrentCTR - Current Transfer Ratio (%) 100 VCE = 5 V 10 1 0.1 0.1 96 117651 10 I F - Forward Current (mA) 100
Figure8. Current Transfer Ratio vs. Forward Current
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Document Number 83760
Rev. 1.6, 04-Sep-06
TCRT5000(L)
Vishay Semiconductors
Package Dimensions in mm
96 12073
Document Number 83760Rev. 1.6, 04-Sep-06
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TCRT5000(L)
Vishay Semiconductors
95 11267
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Document Number 83760
Rev. 1.6, 04-Sep-06
TCRT5000(L)
Vishay Semiconductors
TCRT5000, Tube Dimensions
20298TCRT5000L, Tube Dimensions 20299Document Number 83760Rev. 1.6, 04-Sep-06
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TCRT5000(L)
Vishay Semiconductors
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1.Meet all present and future national and international statutory requirements. 2.Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which areknown as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSsand forbid their use within the next ten years. Various national and international initiatives are pressing for anearlier ban on these substances.Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the useof ODSs listed in the following documents.1.Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendmentsrespectively2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the EnvironmentalProtection Agency (EPA) in the USA3.Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depletingsubstances and do not contain such substances.We reserve the right to make changes to improve technical design and may do so without further notice.Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 83760
Rev. 1.6, 04-Sep-06
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, byestoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay'sterms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any expressor implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitnessfor a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.Customers using or selling these products for use in such applications do so at their own risk and agree to fullyindemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000Revision: 08-Apr-05
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